SI7625DN-T1-GE3 datasheet

Маркировка

SI7625DN-T1-GE3
Производитель

Vishay Intertechnology
Описание

Vishay Intertechnology SI7625DN-T1-GE3 Continuous Drain Current: - 3 A Current - Continuous Drain (id) @ 25?° C: 35A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: - 30 V Fet Feature: Standard Fet Type: MOSFET P-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 47 S Gate Charge (qg) @ Vgs: 126nC @ 10V Gate Charge Qg: 84.5 nC Gate-source Breakdown Voltage: 20 V ID_COMPONENTS: 1716279 Input Capacitance (ciss) @ Vds: 4427pF @ 15V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 125 C Minimum Operating Temperature: - 55 C Mounting Style: Screw Mounting Type: Surface Mount Package / Case: PowerPAK?® 1212-8 Power - Max: 52W Power Dissipation: 3.7 W Rds On (max) @ Id, Vgs: 7 mOhm @ 15A, 10V Resistance Drain-source Rds (on): 0.0056 Ohms Series: TrenchFET?® Transistor Polarity: P-Channel Vgs(th) (max) @ Id: 2.5V @ 250?µA RoHS: yes Drain-Source Breakdown Voltage: - 30 V Gate-Source Breakdown Voltage: 20 V Resistance Drain-Source RDS (on): 7 mOhms at 10 V Configuration: Single Forward Transconductance gFS (Max / Min): 47 S Part # Aliases: SI7625DN-GE3 Other Names: SI7625DN-T1-GE3TR
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7 шт.
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